GaN Systems OL200DS And CL200M Class D Audio Amps
Leading the World in GaN (Gallium Nitride) Power Semiconductors GaN Systems Extends its Lead in Class D Audio
According to GaN Systems “Todays silicon has reached its limits and GaN technology is the clear and undisputed solution for today and tomorrow.” Using GaN technology design engineers are building power systems that are:
- One-quarter the power loss
- One-quarter the size
- One-quarter the weight
- Less expensive than silicon-based solutions
With the release of their OL200DS and CL200M Class-D high-performance GaN FET amplifier boards, together with two complete audio boost converter solutions for marine, auto, and battery-powered vehicles, GaN Systems, the global leader in GaN power semiconductors, has extended its lead in Class D GaN-powered audio.
These new designs are optimized for sound quality, efficiency (no heatsinks), size, and cost. The two new audio boost converter designs include a 210Watt continuous/300Watt peak power source and a 300Watt continuous/500Watt peak power source for manufacturers of stand-alone mono, stereo, and multi-channel automotive and marine amplifiers. The OL200DS and CL200M are self-contained 200Watt per channel Class-D amplifier modules designed for manufacturers of powered loudspeakers and stand-alone stereo and multi-channel amplifiers. The GaN Systems OL200DS is designed as two independent half-bridge outputs for both stereo and single-channel applications. The GaN open loop approach provides an ideal switching form for Class D amplifiers with fewer downsides than silicon. The high switching signal performance delivers a dual feedback loop that performs better than a single loop / closed filter. These new designs leverage the GaN Systems GS61008P GaN power transistors.
CL200M
OL200DS
Basic Specifications:
OL200DS:
- 96% efficiency
- 200 watts/channel, 8 ohms, BTL x 2
- 50 watts/channel, 8 ohms, x 4 Half-Bridge
- Frequency response of +/- 0.2dB (8Ω, 20Hz to 20KHz)
- THD+N “THD + Noise” less than 0.01% at (8Ω, 1W, 20Hz to 20KHz)
- SNR “Signal to Noise Ratio” & DR “Dynamic Range” higher than 114dB
- < 0.1% THD+N @ 200W > 114dB SNR
- Quad half-bridge or dual bridge-tied-load (BTL) topology for ground-referenced output
CL200M:
- 96% efficiency
- 200 watts/channel, 8 ohms
- < 0.04% THD+N, 200W, > 108dB SNR
- Dual half-bridge or bridge-tied-load (BTL) topology for ground-referenced output
Both amplifier designs are supported by the GS-EVB-AUD-SMPS2-GS GaN SMPS (switched mode power supply) that is also available from GaN Systems.
For more information read the news release at GaN Systems.
Find additional information here: 210W and 300W Audio Boost Converters, OL200DS, and CL200M.
For more on FET semiconductor technology read this post.
For more on amplifier classes read this post.
Read these posts for more information on GaN Class D amplifiers:
